Form factor: 2.5 inch
Capacity: 960GB
Host interface: PCIe Gen3 x 4 Lanes
Spec compliance: NVMe spec rev. 1.2 (partial), PCI Express CEM spec rev. 3.0, PCI Express base specification rev. 3.0
NAND flash memory: Samsung V-NAND
Power consumption: Active read/write: Up to 7.5/7.5 W, Idle: 2.5 W (typical)
TBW (@4 KB random write): 1,366 TB
UBER: 1 sector per 10 bits read
MTBF: 2,000,000 hours
Endurance: 1.3 DWPD for 3 years
Sequential read: Up to 2,000 MB/s
:Sequential write: Up to 1,200 MB/s
Random read: Up to 430K IOPS
Random write: Up to 40K IOPS
